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- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
-
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- Rds On - Drain-Source Resistance :
-
- 1.1 mOhms (1)
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- 800 uOhms (2)
- 9 mOhms (4)
- 9.3 mOhms (1)
- 90 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 1 nC (3)
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- 44.7 nC (1)
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- 47 nC (3)
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- 5.6 nC (2)
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- 56 nC (2)
- 58 nC (5)
- 600 pC (2)
- 66 nC (4)
- 67 nC (3)
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- 73 nC (1)
- 73.3 nC (1)
- 75 nC (1)
- 79 nC (4)
- 82 nC (6)
- 83 nC (2)
- 85 nC (6)
- 86 nC (1)
- 86.6 nC (1)
- 88 nC (3)
- 95 nC (2)
- 98 nC (4)
- 99 nC (1)
- Channel Mode :
- Tradename :
208 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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67,313
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
|
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26,157
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | ||||
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32,671
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.7 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
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7,822
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 1.4 mOhms | 3.7 V | 236 nC | StrongIRFET | ||||
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12,024
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | |||
|
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9,027
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | Enhancement | OptiMOS | |||||
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11,812
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
|
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8,763
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.6A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 70 mOhms | 1.2 V | 20 nC | Enhancement | ||||
|
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14,838
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.8 A | 220 mOhms | 800 mV | 17 nC | Enhancement | ||||
|
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4,703
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | |||
|
|
8,888
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | |||
|
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8,790
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | ||||
|
|
GET PRICE |
34,976
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS | ||
|
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1,610
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 2.4 mOhms | 120 nC | ||||||||
|
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19,130
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 1.2 V | 175 nC | Enhancement | OptiMOS | |||
|
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6,134
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
105,900
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
|
|
1,940
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
|
|
4,898
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | ||||
|
|
3,206
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | ||||
|
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7,644
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.4 mOhms | Enhancement | OptiMOS | |||||
|
|
11,755
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 4.8 mOhms | 50 nC | Enhancement | OptiMOS | ||||
|
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4,027
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | ||||
|
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2,457
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 200 nC | Enhancement | Directfet | ||||
|
|
436
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | |||||
|
|
5,010
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 30 nC | Enhancement | OptiMOS | |||
|
|
4,658
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | |||||
|
|
3,377
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.4 mOhms | 1.2 V | 95 nC | Enhancement | OptiMOS | |||
|
|
2,178
In-stock
|
Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | |||
|
|
1,012
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.2 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS |
