- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
473
In-stock
|
Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | |||||
|
1,492
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | ||||||
|
801
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | |||||
|
963
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 6.5 mOhms | 1.2 V | 246 nC | Enhancement | OptiMOS | ||||
|
410
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 6.5 mOhms | Enhancement | OptiMOS | ||||||
|
166
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | |||||||||
|
177
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 6.5 mOhms | 2.25 V | 17 nC | Enhancement | |||||
|
2,997
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 6.5 mOhms | 2.25 V | 17 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | Enhancement | |||||||
|
21,400
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 50 A | 6.5 mOhms | 26 nC | OptiMOS |