- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,180
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
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13,530
In-stock
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Infineon Technologies | MOSFET 100VPower transistor OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.7 mOhms | 2.2 V | 70 nC | Enhancement | ||||
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5,088
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
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1,422
In-stock
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Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 160 A | 4.7 mOhms | 3 V | 210 nC | StrongIRFET | ||||
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1,216
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 4 V | 150 nC | |||||
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970
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.7 mOhms | 100 nC | OptiMOS | |||||
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539
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 4 V | 150 nC | |||||
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308
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 2 V to 4 V | 150 nC | Enhancement | ||||
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172
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 150 nC | Enhancement | ||||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.7 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
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206
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.7 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 4.7 mOhms | 1.2 V | 246 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 150 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 135 A | 4.7 mOhms | 150 nC | Enhancement | ||||||
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530
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 100 A | 4.7 mOhms | Enhancement | OptiMOS |
