- Package / Case :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,740
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 52 mOhms | 3 V | 8.7 nC | OptiMOS | ||||
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4,720
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | ||||
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4,566
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET SH | 20 V | SMD/SMT | DirectFET-SH | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 53 mOhms | 8.7 nC | Enhancement | |||||
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2,186
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | OptiMOS | |||
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1,197
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 2.3 A | 160 mOhms | 800 mV | 8.7 nC | Enhancement |
