- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,884
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 40mOhms 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | 33.3 nC | Enhancement | ||||
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3,743
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | |||
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8,500
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | |||
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8,900
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement |
