- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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9,900
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | 0.8 V | 41 nC | |||
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130
In-stock
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Infineon Technologies | MOSFET 20V Dual N-Channel HEXFET | 12 V | SMD/SMT | DirectFET-SA | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 15 A | 3.8 mOhms | 0.8 V | 54 nC |
