- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,656
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | ||||
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3,743
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | ||||
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6,619
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | ||||
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8,500
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | ||||
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8,900
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | ||||
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2,997
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement |