- Series :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 21A (Ta), 100A (Tc) | 5.6 mOhm @ 50A, 10V | 4V @ 250µA | 75nC @ 10V | 3090pF @ 25V | 10V | ±20V | 3.6W (Ta), 114W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 75V | 42A (Tc) | 16 mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | 2190pF @ 25V | 10V | ±20V | 110W (Tc) | |||||
|
VIEW | Infineon Technologies | MOSFET N-CH 600V 23.8A TO220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | 0 | 1 | N-Channel | - | 600V | 23.8A (Tc) | 160 mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | 1660pF @ 100V | 10V | ±20V | 176W (Tc) | ||||
|
994
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 23.8A TO220-FP | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-FP | 0 | 1 | N-Channel | - | 600V | 23.8A (Tc) | 160 mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | 1660pF @ 100V | 10V | ±20V | 34W (Tc) |