- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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321
In-stock
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Infineon Technologies | MOSFET N-CH 60V 60A TO220-3-31 | TO-220-3 Full Pack | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-31 Full Pack | 0 | 1 | N-Channel | - | 60V | 60A (Tc) | 5.7 mOhm @ 60A, 10V | 4V @ 58µA | 82nC @ 10V | 6600pF @ 30V | 10V | ±20V | 38W (Tc) | |||
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50,440
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) |
