- Series :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 800 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 300A 8HSOF | 8-PowerSFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-HSOF-8-1 | 0 | 2000 | N-Channel | - | 100V | 300A (Tc) | 2 mOhm @ 150A, 10V | 3.5V @ 272µA | 156nC @ 10V | 11200pF @ 50V | 6V, 10V | ±20V | 375W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7 | 0 | 1000 | N-Channel | - | 100V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 3.8V @ 279µA | 210nC @ 10V | 15600pF @ 50V | 6V, 10V | ±20V | 375W (Tc) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET_(75V,120V( | 8-PowerSFN | OptiMOS™-5 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-HSOF-8-1 | 0 | 2000 | N-Channel | - | 100V | 300A (Tc) | 1.5 mOhm @ 100A, 10V | 3.8V @ 275µA | 216nC @ 10V | 16011pF @ 50V | 6V, 10V | ±20V | 375W (Tc) | |||
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4,040
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 100V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | 15600pF @ 50V | 6V, 10V | ±20V | 375W (Tc) | |||
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5,600
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) |