- Package / Case :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 600V 4.4A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO252-3 | 0 | 2500 | N-Channel | - | 600V | 4.4A (Tc) | 950 mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | 10V | ±20V | 37W (Tc) | |||
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5,500
In-stock
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Infineon Technologies | MOSFET N-CH 600V 1.7A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO252-3 | 0 | 2500 | N-Channel | - | 600V | 1.7A (Tc) | 3.3 Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6nC @ 10V | 93pF @ 100V | 10V | ±20V | 18.1W (Tc) | |||
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56,300
In-stock
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Infineon Technologies | MOSFET N-CH 600V 7.3A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO252-3 | 0 | 2500 | N-Channel | - | 600V | 7.3A (Tc) | 600 mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | 10V | ±20V | 63W (Tc) | |||
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46
In-stock
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Infineon Technologies | MOSFET N-CH 650V 83.2A TO247-3 | TO-247-3 | CoolMOS™ C6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | 0 | 1 | N-Channel | - | 650V | 83.2A (Tc) | 37 mOhm @ 33.1A, 10V | 3.5V @ 3.3mA | 330nC @ 10V | 7240pF @ 100V | 10V | ±20V | 500W (Tc) |
