Build a global manufacturer and supplier trusted trading platform.
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP060N06N
1+
$1.580
10+
$1.350
100+
$1.040
500+
$0.913
RFQ
908
In-stock
Infineon Technologies MOSFET N-Ch 60V 45A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 45 A 5.2 mOhms 2.1 V 32 nC Enhancement  
IPP060N06NAKSA1
1+
$1.580
10+
$1.350
100+
$1.040
500+
$0.913
RFQ
564
In-stock
Infineon Technologies MOSFET N-Ch 60V 45A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 45 A 5.2 mOhms 2.1 V 32 nC Enhancement OptiMOS
IPP45N06S4-09
1+
$1.050
10+
$0.848
100+
$0.651
500+
$0.576
RFQ
440
In-stock
Infineon Technologies MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 45 A 7.9 mOhms 2 V 47 nC Enhancement OptiMOS
IPP139N08N3 G
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 80V 45A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 45 A 13.6 mOhms 2.8 V 19 nC Enhancement OptiMOS
Page 1 / 1