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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode Tradename
IXTP3N50D2
1+
$2.770
10+
$2.350
100+
$1.880
500+
$1.650
RFQ
273
In-stock
IXYS MOSFET N-CH MOSFETS (D2) 500V 3A 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 3 A 1.5 Ohms 40 nC    
IXTH10N100D2
1+
$11.240
10+
$10.330
25+
$9.900
100+
$8.730
RFQ
41
In-stock
IXYS MOSFET 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 10 A 1.5 Ohms 200 nC Depletion  
IXTA3N50D2
1+
$2.760
10+
$2.340
100+
$2.030
250+
$1.930
RFQ
334
In-stock
IXYS MOSFET N-CH MOSFETS (D2) 500V 3A 20 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 3 A 1.5 Ohms 40 nC    
IXTT10N100D2
1+
$11.930
10+
$10.970
25+
$10.510
100+
$9.260
RFQ
30
In-stock
IXYS MOSFET D2 Depletion Mode Power MOSFETs   Through Hole TO-268-3     Tube 1 Channel Si N-Channel 1000 V 10 A 1.5 Ohms   Depletion  
IXFH7N90Q
30+
$7.650
120+
$6.640
270+
$6.350
510+
$5.790
VIEW
RFQ
IXYS MOSFET 7 Amps 900V 1.5W Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 7 A 1.5 Ohms   Enhancement HyperFET
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