Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFQ14N80P
1+
$5.090
10+
$4.320
100+
$3.750
250+
$3.560
RFQ
30
In-stock
IXYS MOSFET 14 Amps 800V 0.72 Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 14 A 700 mOhms Enhancement HyperFET
IXFH14N80
30+
$10.940
120+
$9.640
270+
$9.160
510+
$8.570
VIEW
RFQ
IXYS MOSFET 14 Amps 800V 0.7 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 14 A 700 mOhms Enhancement HyperFET
IXFT13N80Q
30+
$9.770
120+
$8.610
270+
$8.190
510+
$7.660
VIEW
RFQ
IXYS MOSFET 13 Amps 800V 0.8 Rds 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 13 A 700 mOhms Enhancement HyperFET
IXTH14N80
30+
$11.250
120+
$9.920
270+
$9.430
510+
$8.820
VIEW
RFQ
IXYS MOSFET 14 Amps 800V 0.7 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 14 A 700 mOhms Enhancement  
IXFH13N80Q
30+
$9.310
120+
$8.200
270+
$7.800
510+
$7.300
VIEW
RFQ
IXYS MOSFET 13 Amps 800V 0.8 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 13 A 700 mOhms Enhancement HyperFET
Page 1 / 1