- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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34
In-stock
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IXYS | MOSFET 2 Amps 1000V 7.5 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7.5 Ohms | Enhancement | |||
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40
In-stock
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IXYS | MOSFET 2 Amps 1000V 7.5 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7.5 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 2 Amps 1000V 7.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7.5 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 2 Amps 1000V 7 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 2 Amps 1000V 7 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7 Ohms | Enhancement |
