- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
35 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
168
In-stock
|
IXYS | MOSFET 4 Amps 1000V 2.8 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3 Ohms | Enhancement | HyperFET | ||||||
|
148
In-stock
|
IXYS | MOSFET 1KV 24A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 1KV 36A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 36 A | 240 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 1KV 10A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 1KV 22A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 18 Amps 1000V 0.5 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 500 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 1KV 15A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 4 Amps 1000V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3.3 Ohms | 3 V to 6 V | 26 nC | Enhancement | HyperFET | ||||
|
10
In-stock
|
IXYS | MOSFET 24 Amps 1000V 0.39 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 1KV 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 1KV 24A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 1KV 6A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 21 Amps 1000V 0.5 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 500 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 21 Amps 1000V 0.5 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 500 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 4 Amps 1000V 2.8 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 34 Amps 1000V 0.28W Rds | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 300 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 3.5 Amps 1000V 3 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 12 Amps 1000V 1.05 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 13 Amps 1000V 0.9 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12.5 A | 900 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 23 Amps 1000V 0.43 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 6 Amps 1000V 2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 1.9 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 10 Amps 1000V 1.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 6 Amps 1000V 2 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 1.9 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 12 Amps 1000V 1 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.1 Ohms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 34 Amps 1000V 0.28 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 34 A | 280 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET |