- Mounting Style :
- Rds On - Drain-Source Resistance :
49 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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476
In-stock
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IXYS | MOSFET 7 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | HyperFET | |||||||
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50
In-stock
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IXYS | MOSFET 38 Amps 1000V 0.21 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 29 A | 230 mOhms | Enhancement | HyperFET | ||||||
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168
In-stock
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IXYS | MOSFET 4 Amps 1000V 2.8 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3 Ohms | Enhancement | HyperFET | ||||||
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7
In-stock
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IXYS | MOSFET 38 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 210 mOhms | Enhancement | HyperFET | ||||||
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190
In-stock
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IXYS | MOSFET 5 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET 26 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 390 mOhms | Enhancement | HyperFET | ||||||
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148
In-stock
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IXYS | MOSFET 1KV 24A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | ||||||
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5
In-stock
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IXYS | MOSFET 38 Amps 1000V 0.25 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 280 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 23 A | 390 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 240 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 32 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 340 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 26 Amps 1000V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 390 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 36A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 36 A | 240 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 10A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 22A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 18 Amps 1000V 0.5 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 500 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 9.5 A | 1 Ohms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 15A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 4 Amps 1000V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3.3 Ohms | 3 V to 6 V | 26 nC | Enhancement | HyperFET | ||||
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10
In-stock
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IXYS | MOSFET 24 Amps 1000V 0.39 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 24A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.90 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 900 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 1KV 6A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2 Ohms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 21 Amps 1000V 0.5 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 500 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 21 Amps 1000V 0.5 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 500 mOhms | Enhancement | HyperFET |