- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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298
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
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106
In-stock
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IXYS | MOSFET 28 Amps 600V 0.1 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 960 mOhms | Enhancement | CoolMOS | |||||
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67
In-stock
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IXYS | MOSFET 24 Amps 500V 0.30 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 300 mOhms | 5 V | 160 nC | Enhancement | ||||
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127
In-stock
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IXYS | MOSFET DIODE Id24 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | Enhancement | HyperFET | |||||
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60
In-stock
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IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 150 mOhms | Enhancement | HyperFET | |||||
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241
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | ||||
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37
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET 24 Amps 1000V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 400 mOhms | 5.5 V | 267 nC | Enhancement | ||||
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30
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
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13,240
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 270 mOhms | Polar2 HiPerFET | ||||||
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40
In-stock
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IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 165 mOhms | Enhancement | CoolMOS | |||||
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34
In-stock
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IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 165 mOhms | Enhancement | CoolMOS | |||||||
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20
In-stock
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IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 5 V | 105 nC | Enhancement | PolarHV, HiPerFET | |||
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148
In-stock
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IXYS | MOSFET 1KV 24A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | ||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 300 mOhms | 140 nC | HyperFET | ||||||
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VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | SMD/SMT | SMPD-24 | Tube | Si | N-Channel | 1100 V | 24 A | 290 mOhms | |||||||||||
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VIEW | IXYS | MOSFET PolarP2 Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | |||||||||||
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VIEW | IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 100 nC | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 24 Amps 900V 0.45 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 450 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
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VIEW | IXYS | MOSFET 32 Amps 1200V | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 24 A | 340 mOhms | Enhancement | HyperFET | |||||
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10
In-stock
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IXYS | MOSFET 24 Amps 1000V 0.39 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 24A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 1KV 24A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 500V 24A Q-Class | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 23 Amps 1000V 0.43 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 200 mOhms | Enhancement | HyperFET |
