- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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100
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 250 V | 100 A | 17 mOhms | 2.5 V | 255 nC | Enhancement | GigaMOS, HiperFET | |||||
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43
In-stock
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IXYS | MOSFET 100Amps 200V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 100 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | Linear L2 | |||||
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50
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||||
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92
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||||
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604
In-stock
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IXYS | MOSFET 100 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||||
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30
In-stock
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IXYS | MOSFET 94 Amps 150V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 13 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET | ||||
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22
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | |||||||
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100
In-stock
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IXYS | MOSFET 100 Amps 40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | ||||
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VIEW | IXYS | MOSFET 100 Amps 100V 0.012 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 12 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 100 Amps 200V 0.023 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 100 A | 23 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | HyperFET |