- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Qg - Gate Charge :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,088
In-stock
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IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
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432
In-stock
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IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||
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221
In-stock
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IXYS | MOSFET 140 Amps 300V 0.024 Ohms Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | Enhancement | HyperFET | |||||
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170
In-stock
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IXYS | MOSFET MOSFET N CHANNEL | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | ||||
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43
In-stock
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IXYS | MOSFET 100Amps 200V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 100 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | Linear L2 | ||||
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193
In-stock
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IXYS | MOSFET -76 Amps -100V 0.024 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 76 A | 24 mOhms | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 115 A | 24 mOhms | Enhancement | HyperFET | |||||
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50
In-stock
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IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||
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90
In-stock
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IXYS | MOSFET 110 Amps 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 110 A | 24 mOhms | Enhancement | ||||||
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7
In-stock
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IXYS | MOSFET 650V/108A Ultra Junction X2-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 108 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | |||||
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31
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | LinearL2 | ||||
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60
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 110A | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 110 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | LinearL2 | ||||
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120
In-stock
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IXYS | MOSFET 120V 300V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 120 A | 24 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
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25
In-stock
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IXYS | MOSFET 120A 300V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 120 A | 24 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
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175
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 110A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 110 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | LinearL2 | |||
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VIEW | IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | LinearL2 |
