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52 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
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3,499
In-stock
|
IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4.5 Ohms | Enhancement | ||||||
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1,000
In-stock
|
IXYS | MOSFET SMD N-CHANNEL POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | ||||
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354
In-stock
|
IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-263HV | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | |||||
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329
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
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395
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | ||||||
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474
In-stock
|
IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | Enhancement | ||||||
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170
In-stock
|
IXYS | MOSFET MOSFET N CHANNEL | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | ||||
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359
In-stock
|
IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | |||
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538
In-stock
|
IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 25 mOhms | Enhancement | ||||||
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168
In-stock
|
IXYS | MOSFET 4 Amps 1000V 2.8 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3 Ohms | Enhancement | HyperFET | |||||
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320
In-stock
|
IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | ||||||
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155
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | 96 nC | ||||||
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29
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | ||||
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183
In-stock
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IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 33 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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138
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | Enhancement | HyperFET | |||||
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30
In-stock
|
IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1700 V | 1 A | 16 Ohms | 47 nC | Depletion | ||||||
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49
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 6A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | ||||||
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250
In-stock
|
IXYS | MOSFET N-CH MOSFETS (D2) 500V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | ||||||
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334
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | ||||||
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74
In-stock
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IXYS | MOSFET 110Amps 150V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 2.5 V | 150 nC | Enhancement | ||||
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441
In-stock
|
IXYS | MOSFET 0.8 Amps 1200V 25 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 800 mA | 20.5 Ohms | 4.5 V | 14 nC | Enhancement | Polar | |||
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86
In-stock
|
IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | 2.5 V | 123 nC | Enhancement | LinearL2 | |||
|
|
105
In-stock
|
IXYS | MOSFET 4 Amps 1000V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3.3 Ohms | 6 V | 26 nC | Enhancement | Polar, HiPerFET | |||
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484
In-stock
|
IXYS | MOSFET N-CH MOSFETS (D2) 1000V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 10 Ohms | 27 nC | ||||||
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234
In-stock
|
IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 8.4 mOhms | Enhancement | ||||||
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29
In-stock
|
IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | |||
|
|
88
In-stock
|
IXYS | MOSFET 110 Amps 55V 0.0066 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.6 mOhms | Enhancement | ||||||
|
|
62
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
|
75
In-stock
|
IXYS | MOSFET 50 Amps 200V 0.06 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 60 mOhms | 5 V | 70 nC | Enhancement | PolarHT |
