- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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474
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | Enhancement | ||||||
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70
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | |||
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62
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | |||
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131
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | |||
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VIEW | IXYS | MOSFET 48 Amps 200V 0.050 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | Enhancement |
