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28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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368
In-stock
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IXYS | MOSFET HiperFET Pwr MOSFET 70V, 340A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 340 A | 4 mOhms | 4 V | 490 nC | Enhancement | HyperFET | |||
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154
In-stock
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IXYS | MOSFET 550Amps 55V | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 550 A | 1 MOhms | 4 V | 595 nC | Enhancement | TrenchT2, GigaMOS | ||||
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85
In-stock
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IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 4 V | 180 nC | Enhancement | Linear | ||||
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159
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | HiPerFET | |||
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621
In-stock
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IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
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24
In-stock
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IXYS | MOSFET 47 Amps 600V 70 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 4 V | 255 nC | Enhancement | CoolMOS | |||
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24
In-stock
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IXYS | MOSFET 25 Amps 800V | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 125 mOhms | 4 V | 180 nC | Enhancement | CoolMOS | |||
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25
In-stock
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IXYS | MOSFET 85 Amps 600V 36 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 85 A | 30 mOhms | 4 V | 500 nC | Enhancement | CoolMOS | |||
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65
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 400 A | 2.3 mOhms | 4 V | 420 nC | Enhancement | TrenchT2, HiperFET | ||||
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36
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | TrenchT2, HiperFET | ||||
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50
In-stock
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IXYS | MOSFET 25 Amps 800V 0.15 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 150 mOhms | 4 V | 180 nC | Enhancement | CoolMOS, ISOPLUS | |||
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14
In-stock
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IXYS | MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 465 A | 1.3 mOhms | 4 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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86
In-stock
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IXYS | MOSFET 500V to 1200V Polar Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 200 mA | 60 Ohms | 4 V | 4.7 nC | Enhancement | ||||
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4
In-stock
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IXYS | MOSFET 75 Amps 100V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 125 C | Tube | Si | N-Channel | 100 V | 75 A | 25 mOhms | 4 V | 180 nC | HiPerFET, ISOPLUS i4-PAC | |||||
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50
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 55V 260A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | ||||
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106
In-stock
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 7 mOhms | 4 V | 42 nC | Enhancement | TrenchT2 | |||
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34
In-stock
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IXYS | MOSFET 120 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 120 A | 7.7 mOhms | 4 V | 78 nC | Enhancement | TrenchT2 | ||||
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37
In-stock
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IXYS | MOSFET 260 Amps 55V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | ||||
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44
In-stock
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IXYS | MOSFET 160Amps 40V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 5 mOhms | 4 V | 79 nC | Enhancement | |||||
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101
In-stock
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IXYS | MOSFET Polar Power Mosfet 800V 1A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 10 Ohms | 4 V | 9 nC | |||||
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10
In-stock
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IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | 4 V | 360 nC | Enhancement | HyperFET | |||
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118
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 320 A | 3.5 mOhms | 4 V | 430 nC | Enhancement | TrenchT2, HiperFET | ||||
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170
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 320 A | 3.5 mOhms | 4 V | 430 nC | Enhancement | HiPerFET | |||
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VIEW | IXYS | MOSFET 120 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 6.1 mOhms | 4 V | 58 nC | Enhancement | TrenchT2 | |||
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VIEW | IXYS | MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 500 mA | 30 Ohms | 4 V | 8.1 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 | |||
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39
In-stock
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IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 | |||
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VIEW | IXYS | MOSFET 200 Amps 55V 0.0042 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 200 A | 3.3 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 |
