- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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9,963
In-stock
|
Nexperia | MOSFET 20 V, dual P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.4 A | 940 mOhms | - 450 mV | 1.3 nC | Enhancement | ||
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GET PRICE |
15,668
In-stock
|
Nexperia | MOSFET 30V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 390 mOhms | 450 mV | 1.3 nC | Enhancement | ||
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GET PRICE |
8,735
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 940 mOhms | - 450 mV | 1.3 nC | Enhancement | ||
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GET PRICE |
13,840
In-stock
|
Nexperia | MOSFET 30V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 390 mOhms | 450 mV | 1.3 nC | Enhancement |
