- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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20,568
In-stock
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onsemi | MOSFET Single N-CH 60V 11A, 37A | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 10.1 mOhms | 1.5 V to 2.3 V | 28 nC | ||||
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2,250
In-stock
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onsemi | MOSFET NFET IPAK 500V 5A 1.2OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 28 nC | ||||||
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2,482
In-stock
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onsemi | MOSFET PFET UDFN 20V 8.2A 18MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.2 A | 14.6 mOhms | - 1 V | 28 nC | Enhancement | |||
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620
In-stock
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onsemi | MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.3 A | 5.5 mOhms | 1.2 V | 28 nC |
