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39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,462
In-stock
|
onsemi | MOSFET T1 60V PCH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.1 A | 183 mOhms | - 2.5 V | 4.3 nC | Enhancement | |||
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1,408
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 33 mOhms | - 2.6 V | 33.5 nC | Enhancement | |||
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GET PRICE |
11,566
In-stock
|
onsemi | MOSFET PFET TSOP6 60V 2.5A 111MO | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 72 mOhms | - 3 V | 18.1 nC | Enhancement | ||
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9,460
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | ||||
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GET PRICE |
30,120
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | |||
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8,890
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | Si | P-Channel | - 60 V | - 4 A | 77 mOhms | - 1.2 V | 14 nC | Enhancement | |||||
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3,840
In-stock
|
onsemi | MOSFET PCH 80MA 100V SOT-23 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 170 mA | 12.5 Ohms | - 2.6 V | 900 pC | Enhancement | |||
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2,627
In-stock
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onsemi | MOSFET PFET 60V 15.5A 130R | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15.5 A | 130 mOhms | - 2 V | 26 nC | Enhancement | |||
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851
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 38 A | 29.5 mOhms | - 2.6 V | Enhancement | ||||
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414
In-stock
|
onsemi | MOSFET PCH -60V -12A TP-FA(DPAK) | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | |||
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2,707
In-stock
|
onsemi | MOSFET PFET 30V 1.95A 20MO | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.95 A | 155 mOhms | - 3 V | 10 nC | Enhancement | |||
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928
In-stock
|
onsemi | MOSFET PCH -60V -12A TP(IPAK) | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | |||
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9,186
In-stock
|
onsemi | MOSFET PFET SOT23 60V 211MA 5OHM | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 196 mA | 1.6 Ohms | - 3 V | 1 nC | Enhancement | |||
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390
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | TO-263-3 | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 38 A | 29.5 mOhms | 80 nC | Enhancement | |||||
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5,996
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 45 mOhms | - 2.6 V | 10 nC | Enhancement | |||
|
|
8,545
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 227 mOhms | - 2.6 V | 2.2 nC | Enhancement | ||||
|
|
500
In-stock
|
onsemi | MOSFET PCH 0.7A 100V SOT-23 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 700 mA | 1.3 Ohms | - 2.6 V | 3.7 nC | Enhancement | |||
|
|
2,500
In-stock
|
onsemi | MOSFET T6 40V SL DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 101 A | 2.9 mOhms | 2 V | 34.3 nC | Enhancement | |||
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1,500
In-stock
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onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||
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1,500
In-stock
|
onsemi | MOSFET T6 40V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 370 A | 0.52 mOhms | 1.2 V | 181 nC | Enhancement | |||
|
|
1,500
In-stock
|
onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||
|
|
1,500
In-stock
|
onsemi | MOSFET T6 40V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 370 A | 0.52 mOhms | 1.2 V | 181 nC | Enhancement | |||
|
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2,500
In-stock
|
onsemi | MOSFET T6 40V SL IN DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 163 A | 1.7 mOhms | 2 V | 80.6 nC | Enhancement | |||
|
|
2,500
In-stock
|
onsemi | MOSFET T6 60V LL DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 49 A | 7.4 mOhms | 1.2 V | 18.7 nC | Enhancement | |||
|
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1,500
In-stock
|
onsemi | MOSFET AFSM T6 60V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | |||
|
|
2,500
In-stock
|
onsemi | MOSFET T6 60V LL DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 38 A | 13.7 mOhms | 1.2 V | 9.6 nC | Enhancement | |||
|
|
1,500
In-stock
|
onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 22 mOhms | 1.2 V | 6 nC | Enhancement | |||
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|
1,500
In-stock
|
onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | |||
|
|
1,500
In-stock
|
onsemi | MOSFET AFSM T6 40V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement | |||
|
|
1,500
In-stock
|
onsemi | MOSFET AFSM T6 40V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement |
