- Package / Case :
- Operating Temperature :
- Factory Stock :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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4,629
In-stock
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onsemi | MOSFET N-CH 100V 10A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 110880 | 1 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 40W (Tc) | |||
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1,024
In-stock
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onsemi | MOSFET NCH 30V 6.9A IPAK TRIMMED | TO-251-3 Stub Leads, IPak | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 30V | 6.9A (Ta), 35A (Tc) | 15 mOhm @ 30A, 10V | 2.5V @ 250µA | 14.1nC @ 11.5V | 770pF @ 12V | 4.5V, 11.5V | ±20V | 1.26W (Ta), 32.6W (Tc) | |||
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6,057
In-stock
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onsemi | MOSFET N-CH 60V 11A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 60V | 11A (Tc) | 115 mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 28W (Tc) |
