- Package / Case :
- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,476
In-stock
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onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | |||
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1,384
In-stock
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onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 107 A | 4.8 mOhms | 1.2 V | 35 nC | Enhancement | |||
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523
In-stock
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onsemi | MOSFET 100V HD3E NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 44 mOhms | 2 V | 35 nC | ||||
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120
In-stock
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onsemi | MOSFET NFET SO8FL 40V 110A | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2.3 mOhms | 1.2 V | 35 nC | Enhancement | |||
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516
In-stock
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onsemi | MOSFET NCH 100A 100V TO-263 | 20 V | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 5.7 mOhms | 2 V | 35 nC | Enhancement |
