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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
2,833
In-stock
STMicroelectronics MOSFET N-CH 600V 1A IPAK TO-251-3 Short Leads, IPak, TO-251AA SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active I-PAK 0 1 N-Channel - 600V 1A (Tc) 8.5 Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 156pF @ 25V 10V ±30V 30W (Tc)
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RFQ
12,000
In-stock
STMicroelectronics MOSFET N-CH 600V 400MA SOT223 TO-261-4, TO-261AA SuperMESH™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 4000 N-Channel - 600V 400mA (Tc) 8.5 Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 156pF @ 25V 10V ±30V 3.3W (Tc)
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