- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
880
In-stock
|
STMicroelectronics | MOSFET N-channel 650 V MDMesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 64 nC | ||||||
|
|
419
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V 22 A | 3 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 139 mOhms | 5 V | 64 nC | ||||||
|
|
980
In-stock
|
STMicroelectronics | MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 650 V | 22 A | 148 mOhms | |||||||||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 4 V | 64 nC | ||||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 124 mOhms | 4 V | 45 nC | Enhancement | MDmesh |
