- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,831
In-stock
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STMicroelectronics | MOSFET N-Ch 200V 1.1 Ohm 1A LGC STripFET II | SMD/SMT | SOT-223-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1 A | 1.5 Ohms | |||||||
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3,445
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 1 Amp | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1 A | 800 mOhms | Enhancement | ||||
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32,420
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 1.0Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | 7 nC | Enhancement | |||
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2,756
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 1.0 A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | Enhancement | ||||
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2,062
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-13ohms 1A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 16 Ohms | 3.75 V | 7.7 nC | Enhancement | ||
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639
In-stock
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STMicroelectronics | MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1 A | 1.5 Ohms | 4 V | 5.7 nC | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 800 V 13 Ohms Zener SuperMESH 1A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1 A | 13 Ohms | 7.7 nC | Enhancement |
