- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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432
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 2.7 mOhm 180A STripFET VII | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 180 A | 2.7 mOhms | 180 nC | |||||||||
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1,262
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | |||||
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374
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 100V 2.1mOhm 180A STripFET VI | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 3.8 V | 180 nC | STripFET | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 2.5 V | 180 nC | Enhancement | STripFET |
