Build a global manufacturer and supplier trusted trading platform.
Packaging :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STH275N8F7-6AG
GET PRICE
RFQ
2,973
In-stock
STMicroelectronics MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 180 A 1.7 mOhms 2.5 V 193 nC Enhancement
STH275N8F7-2AG
GET PRICE
RFQ
3,232
In-stock
STMicroelectronics MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... 20 V SMD/SMT H2PAK-2 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 180 A 1.7 mOhms 2.5 V 193 nC Enhancement
STH270N8F7-6
GET PRICE
RFQ
512
In-stock
STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 180 A 2.1 mOhms 2 V 193 nC Enhancement
STH270N8F7-2
GET PRICE
RFQ
726
In-stock
STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII 20 V SMD/SMT H2PAK-2 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 180 A 2.1 mOhms 2 V 193 nC Enhancement
STP270N8F7
GET PRICE
RFQ
1,982
In-stock
STMicroelectronics MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 180 A 2.5 mOhms 2 V to 4 V 193 nC  
Page 1 / 1