- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,111
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 745 mOhms | ||||||||||
|
1,821
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 6.5 Amp | 16 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 50 mOhms | Enhancement | ||||||
|
601
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6.5 A | 1.6 Ohms | 73 nC | Enhancement | |||||
|
1,113
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 630 mOhms | ||||||||||
|
333
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
|
4,995
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
|
1,998
In-stock
|
STMicroelectronics | MOSFET N-CH 800V IPAK DPAK Mdmesh PWR MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
|
3,000
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 18 nC | Enhancement | |||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 1000 V 1.6 Ohm Zener SuperMESH 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6.5 A | 1.6 Ohms | Enhancement | ||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 745 mOhms | 17.4 nC | Enhancement |