- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,860
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STMicroelectronics | MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH 3 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 2.2 A | 3.6 Ohms | 15 nC | Enhancement | ||||
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419
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STMicroelectronics | MOSFET N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperM... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2.2 A | 6.8 Ohms | 3 V to 4.5 V | 18 nC | Enhancement | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 2.2 A | 3.6 Ohms | 15 nC |