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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Packaging :
Technology :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STD65N3LLH5
1+
$1.020
10+
$0.868
100+
$0.667
500+
$0.590
2500+
$0.413
RFQ
3,200
In-stock
STMicroelectronics MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V 22 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 65 A 6 mOhms 1.8 V 8 nC  
STP70N10F4
1+
$1.570
10+
$1.330
100+
$1.070
500+
$0.930
RFQ
670
In-stock
STMicroelectronics MOSFET N-Ch, 100V-0.015ohms 60A 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 65 A 15 mOhms     Enhancement
SCT50N120
1+
$35.130
5+
$34.760
10+
$32.400
25+
$30.950
RFQ
590
In-stock
STMicroelectronics MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ.... - 10 V to + 25 V Through Hole HiP247-3 - 55 C + 200 C Tube 1 Channel SiC N-Channel 1.2 kV 65 A 52 mOhms 1.8 V 122 nC Enhancement
STF150N10F7
1+
$3.170
10+
$2.700
100+
$2.340
250+
$2.220
RFQ
1,000
In-stock
STMicroelectronics MOSFET POWER MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 65 A 4.2 mOhms 4.5 V 117 nC Enhancement
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