- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,975
In-stock
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STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | |||
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378
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 110 mOhms | 3 V | 93 nC | Enhancement | |||
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996
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.097 Ohm 29A Fdmesh II FD | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 110 mOhms | 80.4 nC | Enhancement | ||||
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810
In-stock
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STMicroelectronics | MOSFET N-Ch Power Mosfet 600V 0.097 Ohm 29A | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 29 A | 110 mOhms | ||||||
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539
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | ||||
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1,969
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MO... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | |||
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615
In-stock
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STMicroelectronics | MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | |||
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876
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 24 A | 110 mOhms | 3 V | 43 nC | Enhancement | ||||
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1,414
In-stock
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STMicroelectronics | MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29 A | 110 mOhms | 4 V | 80.4 nC | ||||
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19,800
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 110 mOhms | ||||||
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493
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5 | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 18.3 A | 110 mOhms | |||||||||
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359
In-stock
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STMicroelectronics | MOSFET Auto-grade N-CH 600V 29A FDmesh II 0.097 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 29 A | 110 mOhms | 4 V | 80.4 nC | ||||
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215
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | |||
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96
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 3 V | 54 nC | Enhancement | ||||
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9,850
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29 A | 110 mOhms | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18.3 A | 110 mOhms | |||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.098 Ohm 29A MDMesh M5 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 29 A | 110 mOhms |
