- Mounting Style :
- Package / Case :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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608
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 21A MDmesh II | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 4 V | 50 nC | |||||
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894
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 Ohm MDmesh II Power MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 50 nC | Enhancement | ||||
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772
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 21A MDmesh II | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 4 V | 50 nC | |||||
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52,000
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 21A MDmesh II | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 4 V | 50 nC |
