- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1.4 A (1)
- 1.5 A (1)
- 10 A (6)
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- 40 A (3)
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- 8 A (8)
- 8.5 A (1)
- 80 A (3)
- 88 A (1)
- 9 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.037 Ohms (1)
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- 0.26 Ohms (1)
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- 1 Ohms (1)
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- 1.25 mOhms (1)
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- 1.4 Ohms (2)
- 1.5 Ohms (4)
- 1.9 mOhms (2)
- 1.9 Ohms (3)
- 10 mOhms (1)
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- 11 mOhms (2)
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- 125 mOhms (1)
- 13 Ohms (1)
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- 168 mOhms (4)
- 175 mOhms (1)
- 190 mOhms (2)
- 2 Ohms (1)
- 2.1 Ohms (3)
- 2.5 mOhms (1)
- 2.75 Ohms (3)
- 2.9 Ohms (1)
- 210 mOhms (4)
- 220 mOhms (1)
- 230 mOhms (1)
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- 30 mOhms (1)
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- 6 Ohms (2)
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- 7 Ohms (1)
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- 780 mOhms (3)
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- 8 Ohms (1)
- 860 mOhms (3)
- 88 mOhms (7)
- 9.5 mOhms (1)
- 90 mOhms (1)
- 900 mOhms (7)
- 910 mOhms (4)
- 93 mOhms (3)
- 950 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (7)
- 100 nC (3)
- 11 nC (6)
- 117 nC (1)
- 118 nC (1)
- 12 nC (8)
- 12.5 nC (4)
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- 13 nC (2)
- 13.5 nC (3)
- 130 nC (3)
- 14 nC (4)
- 15 nC (6)
- 16.5 nC (4)
- 17 nC (9)
- 17.7 nC (4)
- 175 nC (1)
- 19 nC (3)
- 19.5 nC (3)
- 2.63 nC (3)
- 20 nC (2)
- 204 nC (1)
- 21.5 nC (5)
- 22 nC (2)
- 26 nC (1)
- 27 nC (1)
- 28 nC (1)
- 29 nC (9)
- 29.5 nC (1)
- 3.7 nC (3)
- 30 nC (1)
- 32 nC (1)
- 33.3 nC (2)
- 338 nC (1)
- 34 nC (2)
- 340 nC (1)
- 35 nC (2)
- 36 nC (3)
- 363 nC (1)
- 37 nC (3)
- 39 nC (3)
- 4 nC (1)
- 4.5 nC (2)
- 40 nC (5)
- 42 nC (1)
- 43 nC (5)
- 44 nC (3)
- 44.2 nC (4)
- 44.5 nC (1)
- 45.5 nC (4)
- 46 nC (2)
- 5 nC (4)
- 5.3 nC (3)
- 54 nC (4)
- 56 nC (3)
- 57 nC (5)
- 60 nC (2)
- 62.5 nC (1)
- 70 nC (1)
- 8 nC (4)
- 8.5 nC (1)
- 8.6 nC (1)
- 8.8 nC (3)
- 82 nC (1)
- 84 nC (1)
- 88 nC (1)
- 89 nC (2)
- 9 nC (2)
- 9.8 nC (4)
- 90 nC (3)
- 93 nC (2)
- Tradename :
200 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,480
In-stock
|
STMicroelectronics | MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.5 mOhms | 3 V | 130 nC | Enhancement | |||||
|
25,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 310 mOhms | 3 V | 19 nC | Enhancement | |||||
|
512
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 150 mOhms | 3 V | 43 nC | Enhancement | |||||
|
2,462
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | ||||||
|
980
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
|
984
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | ||||||
|
950
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 8 A | 550 mOhms | 3 V | 15 nC | Enhancement | ||||||
|
2,488
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.38 Ohms | 3 V | 8.6 nC | Enhancement | |||||
|
2,206
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | |||||
|
2,359
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
|
968
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 310 mOhms | 3 V | 19 nC | Enhancement | ||||||
|
999
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 4 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | ||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | ||||||
|
100
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | ||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | ||||||
|
599
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | ||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
|
1,500
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | ||||||
|
250
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | ||||||
|
140
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | ||||||
|
976
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | ||||||
|
908
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | ||||||
|
391
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 445 mOhms | 3 V | 22 nC | Enhancement | |||||
|
2,495
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | |||||
|
496
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 12 A | 0.37 Ohms | 3 V | 29 nC | Enhancement | ||||||
|
50
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | ||||||
|
964
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
|
82
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | ||||||
|
985
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | |||||
|
182
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement |