- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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849
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | |||||
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5,889
In-stock
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STMicroelectronics | MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | 1 V to 2.5 V | 42 nC | Enhancement | |||||
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1,442
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II | 2 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 12 A | 900 mOhms | 4 V | 42 nC | ||||||
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976
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II | 2 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 12 A | 900 mOhms | 4 V | 42 nC | ||||||
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1,197
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | |||||
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1,027
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 2.7 Ohms | 42 nC | Enhancement | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power M... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | 2 V | 42 nC | Enhancement | STripFET | |||
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2,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power M... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | 2 V | 42 nC | Enhancement | STripFET | |||
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1,500
In-stock
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STMicroelectronics | MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 8.4 A | 680 mOhms | 3.75 V | 42 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 0.75 Ohm 10 A Zener-protect | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 750 mOhms | 3 V | 42 nC | Enhancement | ||||
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998
In-stock
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STMicroelectronics | MOSFET N-channel 620 V 8.4 A TO-220 TO-22 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 8.4 A | 680 mOhms | 42 nC | ||||||
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927
In-stock
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STMicroelectronics | MOSFET N-Channel 400V to 650V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 750 mOhms | 42 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II | 2 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 280 mOhms | 4 V | 42 nC | ||||||
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653
In-stock
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STMicroelectronics | MOSFET N-CH 650V 0.75Ohm 10A Zener-protected | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 750 mOhms | 4.5 V | 42 nC | Enhancement | SuperMesh |