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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STD180N4F6
1+
$1.560
10+
$1.330
100+
$1.060
500+
$0.928
2500+
$0.716
RFQ
2,480
In-stock
STMicroelectronics MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power M... 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 80 A 2.5 mOhms 3 V 130 nC Enhancement
STH175N4F6-2AG
1+
$1.810
10+
$1.530
100+
$1.230
500+
$1.080
1000+
$0.888
RFQ
1,000
In-stock
STMicroelectronics MOSFET POWER MOSFET 20 V SMD/SMT H2PAK-2 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 120 A 1.9 mOhms 3 V 130 nC Enhancement
STH175N4F6-6AG
1+
$1.930
10+
$1.640
100+
$1.310
500+
$1.150
1000+
$0.947
RFQ
990
In-stock
STMicroelectronics MOSFET POWER MOSFET 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 120 A 1.9 mOhms 3 V 130 nC Enhancement
STW62NM60N
1+
$17.640
10+
$16.220
25+
$15.550
100+
$13.700
RFQ
468
In-stock
STMicroelectronics MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET 25 V Through Hole TO-247-3     Tube 1 Channel Si N-Channel 600 V 3 A 48 mOhms 4 V 130 nC  
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