- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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948
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 5 mOhms | 2 V | 189 nC | Enhancement | ||||
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5,909
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0025 mOhm typ., 80 A STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3 mOhms | 2 V | 40 nC | Enhancement | ||||
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954
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.3 mOhms | 2 V | 183 nC | Enhancement | ||||
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1,389
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 8 mOhms | 2 V | 100 nC | Enhancement | ||||
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1,872
In-stock
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STMicroelectronics | MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 68 V | 85 A | 8.2 mOhms | 2 V | 90 nC | Enhancement | |||||
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1,571
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
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2,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power M... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | 2 V | 42 nC | Enhancement | STripFET |