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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.790
RFQ
4,559
In-stock
Texas instruments MOSFET N-CH 100V 86A TO220-3 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 100V 100A (Ta) 10.5 mOhm @ 55A, 10V 3.4V @ 250µA 35nC @ 10V 2670pF @ 50V 6V, 10V ±20V 188W (Tc)
Default Photo
Per Unit
$1.780
RFQ
2,405
In-stock
Texas instruments MOSFET N-CH 80V 94A TO220-3 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 80V 100A (Ta) 9.2 mOhm @ 60A, 10V 3.4V @ 250µA 36nC @ 10V 2730pF @ 40V 6V, 10V ±20V 188W (Tc)
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