- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,000
In-stock
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Texas instruments | MOSFET P-CH Pwr MOSFET 20V 90mohm | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 105 mOhms | - 950 mV | 0.913 nC | NexFET | |||||
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5,634
In-stock
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Texas instruments | MOSFET 20V P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 825 mOhms | - 1.2 V | 1090 pC | Enhancement | |||||
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2,225
In-stock
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Texas instruments | MOSFET 20V ,PCh FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 105 mOhms | - 950 mV | 0.913 nC | Enhancement | FemtoFET | ||||
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906
In-stock
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Texas instruments | MOSFET 20V P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 825 mOhms | - 1.2 V | 1090 pC | Enhancement | FemtoFET |