- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,548
In-stock
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Texas instruments | MOSFET CSD83325L, Dual N-Ch nel NexFET? | 10 V, 10 V | SMD/SMT | BGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 8 A | 7.9 mOhms | 750 mV | 10.9 nC | Enhancement | NexFET | |||
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860
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 7.9 mOhms | 1.1 V | 7.9 nC | Enhancement |
