- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,918
In-stock
|
Texas instruments | MOSFET Dual 20V N-CH Pwr MOSFETs | 10 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 12 A | 14 mOhms | 1.1 V | 11.7 nC | NexFET | ||||
|
|
563
In-stock
|
Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 14 mOhms | 3 V | 14 nC | Enhancement | NexFET | |||
|
|
1,320
In-stock
|
Texas instruments | MOSFET 8-V P-Channel NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 14 mOhms | - 450 mV | 18.9 nC | Enhancement | NexFET |
