- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,175
In-stock
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Texas instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | |||||
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3,851
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 8.8 mOhms | 1.3 V | 5.1 nC | NexFET | |||||
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713
In-stock
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Texas instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | |||||
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21,000
In-stock
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Texas instruments | MOSFET N-CH Power MOSFET 12V 9.3mohm | 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 14.4 A | 9.3 mOhms | 800 mV | 5.1 nC | Depletion | NexFET |