- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
12,520
In-stock
|
Texas instruments | MOSFET Sync Buck NexFET Power Block | 10 V, 10 V | SMD/SMT | LSON-CLIP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 25 A | 2.4 Ohms, 1.2 Ohms | 1 V, 750 mV | 5.7 nC, 10.7 nC | Enhancement | NexFET | |||
|
|
3,548
In-stock
|
Texas instruments | MOSFET CSD83325L, Dual N-Ch nel NexFET? | 10 V, 10 V | SMD/SMT | BGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 8 A | 7.9 mOhms | 750 mV | 10.9 nC | Enhancement | NexFET | |||
|
|
415
In-stock
|
Texas instruments | MOSFET 30-V Synchronous Buck NexFET Power Block 8-LSON-CLI... | 10 V, 10 V | SMD/SMT | LSON-CLIP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 25 A | 2.4 Ohms, 1.2 Ohms | 1 V, 750 mV | 5.7 nC, 10.7 nC | Enhancement | NexFET | |||
|
|
9,000
In-stock
|
Texas instruments | MOSFET CSD85301Q2 Dual N- Channel Power MOSFET | 10 V, 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 8 A | 23 mOhms, 23 mOhms | 600 mV, 600 mV | 5.4 nC, 5.4 nC | Enhancement | NexFET |
