- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
55,000
In-stock
|
Toshiba | MOSFET Small-signal MOSFET 2-in-1 | +/- 10 V, +/- 8 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 500 mA, - 330 mA | 460 mOhms, 950 mOhms | 350 mV, - 1 V | 1.23 nC, 1.2 nC | Enhancement | ||||
|
|
2,971
In-stock
|
Toshiba | MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A | +/- 8 V, +/- 12 V | SMD/SMT | uDFN-6 | - | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 4 A, - 4 A | 108 mOhms, 157 mOhms | 400 mV, - 500 mV | 3.6 nC, 6.74 nC | Enhancement | |||
|
|
3,000
In-stock
|
Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 8 V | SMD/SMT | UF6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.6 A, - 1.5 A | 247 mOhms, 430 mOhms | 350 mV, - 300 mV | 7.5 nC, 6.4 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 180 mA, - 100 mA | 20 Ohms, 44 Ohms | 400 mV, - 400 mV | Enhancement |
