- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,144
In-stock
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Toshiba | MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 54 mOhms | ||||||||
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GET PRICE |
1,513
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | 8 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 54 mOhms | - 0.3 V to - 1 V | 23.1 nC | |||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 54 mOhms | 2 V to 4 V | 11.2 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET P-ch -40V -4.8A PS-8 | SMD/SMT | PS8-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.8 A | 54 mOhms |
